Low Temperature Graphene-Like Film Growth By Microwave Plasma Enhance Chemical Vapor Deposition Technique

Multilayer graphene like (MLG) film were grown on copper substrates by the microwave plasma enhanced chemical vapor deposition (MW PECVD) technique at low pressure of ~ 5.5 x 10-2 Torr. Copper has been used as catalyst substrate for deposition. The growth temperature was found to be 750 ºC. The precursor gas methane was found to dissociate at low temperature with assist of plasma. The MLG films were removed from copper with the help of ferric chloride solution and were transferred to glass substrate. The appearance of 2D band in Raman spectra confirms the growth of graphene film. The highest I2D/IG ratio was found to be 0.70, which confirms few layer graphene.